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 Product Specification
www.jmnic.com
Silicon NPN Power Transistors
2SD2401
DESCRIPTION With MT-200 package Complement to type 2SB1570 DARLINGTON APPLICATIONS Audio, Series Regulator and General Purpose
PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (MT-200) and symbol DESCRIPTION
Absolute maximum ratings (Ta=25ae )
SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collectorl power dissipation Junction temperature Storage temperature TC=25ae CONDITIONS Open emitter Open base Open collector VALUE 160 150 5 12 1 150 150 -55~150 ae ae UNIT V V V A A W
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25ae unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=30mA; IB=0 IC=7 A;IB=7m A IC=7 A;IB=7m A VCB=160V; IE=0 VEB=5V; IC=0 IC=7A ; VCE=4V IC=2A ; VCE=12V IE=0; VCB=10V;f=1MHz 5000 55 95 MIN 150 TYP.
2SD2401
SYMBOL VCEO VCEsat VBEsat ICBO IEBO hFE fT COB
MAX
UNIT V
2.5 3.0 100 100 |I |I
V V A A
MHz pF
Switching times ton ts tf Turn-on time Storage time Fall time IC=7A;RL=10| IB1=- IB2=7mA VCC=70V 0.5 10.0 1.1 |I |I |I s s s
hFE classifications O 5000-12000 P 6500-20000 Y 15000-30000
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
PACKAGE OUTLINE
2SD2401
Fig.2 Outline dimensions
JMnic


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